Method for forming electrode

Abstract

A method for forming an electrode of a semiconductor device according to an embodiment of the invention includes forming a ruthenium layer on a substrate by performing n times of a ruthenium layer formation cycle including spraying a ruthenium-containing precursor, and forming a metal layer on a ruthenium layer by performing m times of a metal layer formation cycle including spraying a metal-containing precursor, wherein a ruthenium layer formation cycle and a metal layer formation cycle are sequentially performed, or a ruthenium layer formation cycle and a metal layer formation cycle are sequentially performed and repeated two or more times. Therefore, according to embodiments of the invention, in forming an electrode including a ruthenium layer and a copper layer, it is possible to improve adhesion between the ruthenium layer and the copper layer.

Dependencies are inferred from the claim text.