C23C 16/45534
Use of auxiliary reactants other than used for contributing to the composition
Official title: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers}
C23C16/45534 (Use of auxiliary reactants other than used for contributing to the composition) appears on 497 US grants and 787 published applications in this corpus.
Search patents in C23C- Granted patents
- 497
- Published applications
- 787
- Assignees
- 142
- Inventors
- 1,286
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 4 |
| 2002 | 5 | 7 |
| 2003 | 2 | 6 |
| 2004 | 7 | 8 |
| 2005 | 6 | 4 |
| 2006 | 11 | 14 |
| 2007 | 5 | 14 |
| 2008 | 8 | 8 |
| 2009 | 8 | 9 |
| 2010 | 11 | 11 |
| 2011 | 8 | 7 |
| 2012 | 9 | 18 |
| 2013 | 16 | 17 |
| 2014 | 7 | 16 |
| 2015 | 14 | 21 |
| 2016 | 24 | 28 |
| 2017 | 15 | 21 |
| 2018 | 21 | 26 |
| 2019 | 22 | 37 |
| 2020 | 26 | 49 |
| 2021 | 27 | 67 |
| 2022 | 41 | 86 |
| 2023 | 41 | 74 |
| 2024 | 45 | 72 |
| 2025 | 68 | 120 |
| 2026 | 40 | 43 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Group 2 metal containing film forming compositions and vapor deposition of the films using the same15 Sep 2026US 12,735,787 B2L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude
- Method for forming region-selective thin film using selectivating agent8 Sep 2026US 12,729,427 B2EGTM Co., Ltd.
- Substrate processing method25 Aug 2026US 12,721,116 B2ASM IP Holding B. V.
- Methods of selective deposition and chemical delivery systems18 Aug 2026US 12,709,797 B2Lam Research Corporation
- Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium18 Aug 2026US 12,713,847 B2Kokusai Electric Corporation
- Area selective deposition of metal film on silicon containing surfaces utilizing alcohols8 Oct 2026US 2026/0308761 A1Merck Patent GmbH
- Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus24 Sep 2026US 2026/0286522 A1Kokusai Electric Corporation
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus20 Aug 2026US 2026/0242944 A1Kokusai Electric Corporation
- Deposition of metal films6 Aug 2026US 2026/0226621 A1Lam Research Corporation
- Method of forming treated silicon-carbon material30 Jul 2026US 2026/0223609 A1ASM IP Holding B. V.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002
- Vapor deposition of metal carbide films610US 7,611,751 B2ASM America, Inc. · 2009
- Atomic layer deposition for controlling vertical film growth547US 8,592,005 B2ASM Japan K .K. · 2013
- Method and system to reduce outgassing in a reaction chamber536US 8,993,054 B2ASM IP Holding B. V. · 2015