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US 2026/0223609 A1Published application
Method of forming treated silicon-carbon material
AssigneeASM IP Holding B.V.
InventorsHirotsugu Sugiura, Yoshiyuki Kikuchi
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Abstract
Methods and systems of forming treated silicon-carbon material are disclosed. Exemplary methods include depositing silicon-carbon material onto a surface of the substrate and treating the silicon-carbon material. The step of treating can include a first treatment step followed by a second treatment step, wherein the first treatment step includes providing first reductant gas activated species and the second treatment step includes providing one or more of a first oxidant gas activated species and a second reductant gas activated species.
Claims20
A reactor system comprising:
- a reaction chamber;
- a first electrode;
- a second electrode;
- plasma power source coupled to the first electrode;
- a stage within the reaction chamber, the stage configured to receive a substrate;
- and
- a controller, wherein the controller is configured to:
- provide a substrate within the reaction chamber;
- deposit silicon-carbon material onto a surface of the substrate;
- and
- after the step of deposit silicon-carbon material, treat the silicon-carbon material, wherein the treat the silicon-carbon material comprises:
- a first treatment step followed by a second treatment step,
- wherein the first treatment step comprises providing first reductant gas activated species;
- and
- wherein the second treatment step comprises providing one or more of a first oxidant gas activated species and a second reductant gas activated species.
12 more elements
Dependencies are inferred from the claim text.