Area selective deposition of metal film on silicon containing surfaces utilizing alcohols

A method of selectively depositing a film on a surface of a substrate wherein the surface of the substrate comprises at least a first surface comprising silicon nitride and at least a second surface comprising a material other than silicon nitride, the method comprising the steps of:

• a. optionally, treating the surface with hydrogen plasma or ammonia plasma;
• b. exposing the surface to at least one alcohol having a structure according to Formula I:
• wherein, R is selected from the group consisting of a substituted or unsubstituted C4 to C18 linear alkyl group, a substituted or unsubstituted branched C4 to C18 alkyl group, a substituted or unsubstituted C3 to C8 cyclic alkyl group, a substituted or unsubstituted C3 to C10 heterocyclic group, a substituted or unsubstituted C3 to C18 alkenyl group, a substituted or unsubstituted C4 to C18 aryl group, a substituted or unsubstituted C5 to C20 arylalkyl group, and a substituted or unsubstituted C3 to C10 alkynyl group, wherein the at least one alcohol selectively reacts with the silicon nitride to passivate the first surface thereby leaving the second surface substantially unreacted;
• and
• c. exposing the surface of the substrate to one or more deposition precursors to deposit a metal film on the second surface selectively over the first surface.