Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
AssigneeSamsung Electronics Co., Ltd.
InventorsYeong-Kwan Kim, Young-Wook Park, Seung-Hwan Lee
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Abstract
An atomic layer deposition method of forming a solid thin film layer containing silicon. A substrate is loaded into a chamber. A first portion of a first reactant is chemisorbed onto the substrate, and a second portion of the first reactant is physisorbed onto the substrate. The physisorbed portion is purged from the substrate and the chamber. A second reactant is injected into the chamber. A first portion is chemically reacted with the chemisorbed first reactant to form a silicon-containing solid on the substrate. The first reactant is preferably Si[N(CH3)2]4, SiH[N(CH3)2]3, SiH2[N(CH3)2]2 or SiH3[N(CH3)2]. The second reactant is preferably activated NH3.
Claims28
An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of:
- a) placing a substrate into a chamber;
- b) injecting a first reactant containing Si and an aminosilane into the chamber;
- c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate;
- d) removing the physisorbed second portion of the first reactant from the substrate;
- e) injecting a second reactant into the chamber;
- f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate;
- and,
- g) removing the non-chemically reacted portion of the second reactant from the chamber.
A method of manufacturing a solid thin film containing silicon comprising the steps of:
- a) placing a substrate into a chamber;
- b) injecting a first gaseous reactant containing Si and H(CH3)2 into the chamber;
- c) reacting a first portion of the first reactant to form a first silicon-containing solid on the substrate and physisorbing a second portion of the first reactant onto the substrate;
- d) removing the physisorbed second portion of the first reactant from the substrate;
- e) injecting a second reactant into the chamber;
- f) chemically reacting a first portion of the second reactant to form a second silicon-containing solid on the substrate and physisorbing a second portion of the second reactant onto the substrate;
- and,
- g) removing the physisorbed second portion of the second reactant from the chamber.
An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of:
- a) placing a substrate into a chamber;
- b) injecting a first reactant containing Si and an aminosilane into the chamber;
- c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate;
- d) removing the physisorbed second portion of the first reactant from the substrate;
- e) injecting a second reactant into the chamber;
- f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate;
- g) removing the unreacted portion of the second reactant from the chamber;
- and,
- h) repeating one or more of steps b)-g).
Dependencies are inferred from the claim text.