C23C 16/45536
Use of plasma, radiation or electromagnetic fields
Official title: {Use of plasma, radiation or electromagnetic fields}
C23C16/45536 (Use of plasma, radiation or electromagnetic fields) appears on 1,705 US grants and 2,613 published applications in this corpus.
Search patents in C23C- Granted patents
- 1,705
- Published applications
- 2,613
- Assignees
- 348
- Inventors
- 3,490
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 5 |
| 2002 | 12 | 32 |
| 2003 | 21 | 31 |
| 2004 | 19 | 32 |
| 2005 | 17 | 44 |
| 2006 | 24 | 57 |
| 2007 | 13 | 58 |
| 2008 | 29 | 67 |
| 2009 | 31 | 47 |
| 2010 | 43 | 46 |
| 2011 | 40 | 43 |
| 2012 | 39 | 65 |
| 2013 | 39 | 68 |
| 2014 | 58 | 96 |
| 2015 | 65 | 132 |
| 2016 | 94 | 122 |
| 2017 | 87 | 127 |
| 2018 | 93 | 152 |
| 2019 | 118 | 150 |
| 2020 | 129 | 177 |
| 2021 | 102 | 180 |
| 2022 | 114 | 224 |
| 2023 | 110 | 182 |
| 2024 | 134 | 148 |
| 2025 | 160 | 195 |
| 2026 | 94 | 133 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of manufacturing a redistribution layer, redistribution layer, integrated circuit and methods for electrically testing and protecting the integrated circuit6 Oct 2026US 12,753,493 B2STMicroelectronics S,r.l.
- Method for etching an etch layer6 Oct 2026US 12,757,660 B2Lam Research Corporation
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Method of forming dielectric material layer using plasma29 Sep 2026US 12,747,498 B2ASM IP Holding B. V.
- Plasma showerhead assembly and method of reducing defects29 Sep 2026US 12,747,502 B2APPLIED Materials.Inc.
- Method of forming gallium oxynitride layer1 Oct 2026US 2026/0297744 A1Jusung Engineering Co., Ltd.
- Plasma enhanced vapor deposition methods and systems for forming low-k material films1 Oct 2026US 2026/0297745 A1ASM IP Holding B. V.
- Method of manufacturing thin film by using atomic layer deposition method and method of manufacturing semiconductor device using the same1 Oct 2026US 2026/0297746 A1Samsung Electronics Co., Ltd.
- Method for forming an underlayer, semiconductor structure, and reactor system1 Oct 2026US 2026/0299421 A1ASM IP Holding B. V.
- Method of depositing material and semiconductor devices1 Oct 2026US 2026/0305195 A1ASM IP Holding B. V.
Most cited
By later US patents
- Sequential chemical vapor deposition1,159US 5,916,365 A1999
- Apparatus and method for growth of a thin film940US 6,511,539 B1ASM America, Inc. · 2003
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002