Plasma enhanced vapor deposition methods and systems for forming low-k material films
AssigneeASM IP Holding B.V.
InventorsPaul Chatelain, Jerome Samuel Nicolas
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Abstract
Plasma enhanced vapor deposition methods for forming a low-k material layer on a surface of a substrate are disclosed. Exemplary methods comprise providing a substrate in a reaction chamber, providing a hydrogen source to the reaction chamber, providing a plasma to the reaction chamber, and providing a Si-precursor to the reaction chamber. The Si-precursor comprises at least one silicon atom that is bonded to an oxygen atom and to an optionally substituted vinyl group. Systems for performing the plasma enhanced vapor deposition methods are also disclosed.
Claims20
A method for forming a low-k material layer on a surface of a substrate, the method comprising:
- providing the substrate in a reaction chamber;
- and
- forming the low-k material layer on the surface of the substrate using a vapor deposition process comprising:
- providing a Si-precursor to the reaction chamber, wherein the Si-precursor comprises at least one silicon atom that is bonded to an oxygen atom and to an optionally substituted vinyl group;
- providing a hydrogen source to the reaction chamber;
- and
- providing a plasma to the reaction chamber.
Dependencies are inferred from the claim text.