Method of forming dielectric material layer using plasma

A method of forming dielectric material layer on a surface of a substrate, the method comprising the steps of:

• a deposition step at a deposition temperature comprising:
• providing a substrate within a first reaction chamber;
• providing a precursor to the first reaction chamber;
• providing a reactant to the first reaction chamber;
• and
• providing pulsed plasma power to the first reaction chamber;
• and
• a curing step comprising:
• providing a curing gas to the substrate;
• providing a first curing step at a first curing temperature, wherein the first curing step comprises use of at least one of capacitively coupled plasma, inductivity coupled plasma, or UV exposure;
• and
• providing a second curing step at a second curing temperature, wherein the second curing temperature is higher than the first curing temperature,
• wherein the curing gas comprises a mixture of hydrogen and at least one of helium or argon,
• wherein the curing gas is provided during the first curing step and the second curing step,
• wherein the first curing step comprises use of at least one of the capacitively coupled plasma or the inductivity coupled plasma, and
• wherein the second curing step comprises using at least one of the capacitively coupled plasma or inductivity coupled plasma.