C23C 16/45542
Plasma being used non-continuously during the ald reactions
Official title: {Plasma being used non-continuously during the ALD reactions}
C23C16/45542 (Plasma being used non-continuously during the ald reactions) appears on 657 US grants and 953 published applications in this corpus.
Search patents in C23C- Granted patents
- 657
- Published applications
- 953
- Assignees
- 150
- Inventors
- 1,353
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 2 |
| 2002 | 6 | 8 |
| 2003 | 7 | 19 |
| 2004 | 12 | 19 |
| 2005 | 6 | 16 |
| 2006 | 14 | 33 |
| 2007 | 7 | 32 |
| 2008 | 14 | 41 |
| 2009 | 17 | 25 |
| 2010 | 23 | 21 |
| 2011 | 20 | 12 |
| 2012 | 15 | 28 |
| 2013 | 20 | 19 |
| 2014 | 22 | 30 |
| 2015 | 24 | 57 |
| 2016 | 48 | 46 |
| 2017 | 29 | 40 |
| 2018 | 45 | 64 |
| 2019 | 45 | 51 |
| 2020 | 47 | 69 |
| 2021 | 41 | 58 |
| 2022 | 33 | 61 |
| 2023 | 41 | 58 |
| 2024 | 44 | 43 |
| 2025 | 46 | 70 |
| 2026 | 30 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Sequential chemical vapor deposition1,159US 5,916,365 A1999
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- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
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