Back to results
US 2026/0209933 A1Published application
Cyclical deposition method including treatment step and apparatus for same
AssigneeASM IP Holding B.V.
InventorsKai Matsuhisa, Wataru Adachi, Taishi Ebisudani
Life of this patent
Estimating the term…
Abstract
A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a gap within the surface of the substrate with reduced or no seam formation.
Claims28
A method of filling a gap, the method comprising:
- seating a substrate comprising a gap within a reaction chamber;
- forming an inhibition layer proximate a top area of the gap by forming first active species from a first reactant gas;
- depositing a first portion of gapfill material by performing one or more first portion deposition cycles, wherein each first portion deposition cycle of the one or more first portion deposition cycles comprises:
- providing a second reactant gas;
- pulsing a precursor;
- and
- applying a first plasma power to form active species from the second reactant gas,
- wherein deposition of the first portion of gapfill material is inhibited proximate the top area;
- and
- depositing a second portion of gapfill material by performing one or more second portion deposition cycles, wherein each second portion deposition cycle of the one or more second portion deposition cycles comprises:
- providing a third reactant gas;
- pulsing the precursor or another precursor;
- and
- applying a second plasma power to form active species from the third reactant gas,
- wherein the second plasma power is greater than the first plasma power.
12 more elements
A method of filling a gap, the method comprising:
- seating a substrate comprising a gap within a reaction chamber;
- forming an inhibition layer proximate a top area of the gap by forming first active species from a first reactant gas;
- depositing a first portion of gapfill material by performing one or more first portion deposition cycles, wherein each first portion deposition cycle of the one or more first portion deposition cycles comprises:
- providing a second reactant gas;
- pulsing a precursor;
- and
- applying a first plasma power to form active species from the second reactant gas,
- wherein deposition of the first portion of gapfill material is inhibited proximate the top surface;
- and
- depositing a second portion of gapfill material by performing one or more second portion deposition cycles, wherein each second portion deposition cycle of the one or more second portion deposition cycles comprises:
- providing a third reactant gas;
- pulsing the precursor or another precursor;
- and
- applying a second plasma power to form active species from the third reactant gas.
11 more elements
A reactor system comprising:
- one or more reaction chambers for accommodating a substrate comprising a gap;
- a first source for a first reactant in gas communication via a first valve with one of the reaction chambers;
- a second source for a second reactant in gas communication via a second valve with one of the reaction chambers;
- a third source for a third reactant in gas communication via a third valve with one of the reaction chambers;
- a precursor source for a precursor in gas communication via a third valve with one of the reaction chambers;
- and
- a controller operably connected to the first, second, and third gas valves and configured and programmed to control the reactor system to:
- form an inhibition layer proximate a top area of the gap by forming first active species from a first reactant gas comprising the first reactant;
- deposit a first portion of gapfill material by performing one or more first portion deposition cycles, wherein each first portion deposition cycle of the one or more first portion deposition cycles comprises:
- providing a second reactant gas comprising the second reactant;
- pulsing the precursor;
- and
- applying a first plasma power to form active species from the second reactant gas,
- wherein deposition of the first portion of gapfill material is inhibited proximate the top surface;
- and
- deposit a second portion of gapfill material by performing one or more second portion deposition cycles, wherein each second portion deposition cycle of the one or more second portion deposition cycles comprises:
- providing a third reactant gas comprising the third reactant;
- pulsing the precursor or another precursor;
- and
- applying a second plasma power to form active species from the third reactant gas,
- wherein the second plasma power is greater than the first plasma power.
18 more elements
Dependencies are inferred from the claim text.