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US 12,729,435 B2Granted
Methods for depositing gap-filling fluids and related systems and devices
AssigneeASM IP Holding B.V.
InventorsRené Henricus Jozef Vervuurt, Timothee Blanquart, Viljami Pore
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Abstract
Methods and systems for filling a gap comprised in the substrate with a gap filling fluid. The gap filling fluid is formed in a plasma with a first precursor and a second precursor.
Claims20
A method of filling a gap comprising:
- introducing a substrate in a reaction chamber, the substrate being provided with a gap;
- introducing a reaction gas in the reaction chamber, the reaction gas comprising a noble gas, a first precursor and a second precursor, the first precursor being different from the second precursor;
- and,
- generating a plasma in the reaction chamber,
- thereby forming a gap filling fluid that at least partially fills the gap,
- wherein at least one of the first precursor and the second precursor is selected from the group consisting of N,N-diethyl-(1,1,2,3,3,3-hexafluoropropyl)amine, N,N-diethyl-(E)-pentafluoropropenylamine, and combinations thereof.
3 more elements
A method of filling a gap comprising:
- introducing a substrate in a reaction chamber, the substrate being provided with a gap;
- introducing a reaction gas in the reaction chamber, the reaction gas comprising a noble gas, a first precursor and a second precursor, the first precursor being different from the second precursor;
- and,
- generating a plasma in the reaction chamber,
- thereby forming a gap filling fluid that at least partially fills the gap,
- wherein:
- the first precursor is N,N-diethyl-(1,1,2,3,3,3-hexafluoropropyl)amine and the second precursor is N,N-diethyl-(E)-pentafluoropropenylamine;
- or
- the first precursor is N,N-diethyl-(1,1,2,3,3,3-hexafluoropropyl)amine and the second precursor is a metal precursor, or
- the first precursor is N,N-diethyl-(E)-pentafluoropropenylamine and the second precursor is a metal precursor.
7 more elements
Dependencies are inferred from the claim text.