Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Yi Lee, Hong-Hsien Ke, Chung-Ting Ko, Chia-Hui Lin, Jr-Hung Li
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Abstract
An etch stop layer is formed over a semiconductor fin and gate stack. The etch stop layer is formed utilizing a series of pulses of precursor materials. A first pulse introduces a first precursor material to the semiconductor fin and gate stack. A second pulse introduces a second precursor material, which is turned into a plasma and then directed towards the semiconductor fin and gate stack in an anisotropic deposition process. As such, a thickness of the etch stop layer along a bottom surface is larger than a thickness of the etch stop layer along sidewalls.
Claims20
An integrated circuit device comprising:
- a source/drain region over a semiconductor fin, the source/drain region having an oxygen penetration depth of less than about 16 Å;
- a gate stack adjacent to the source/drain region;
- spacers adjacent to the gate stack;
- and
- a layer of silicon nitride adjacent to the gate stack, the layer of silicon nitride having a density of about 2.92 g/cm3, a stress of about 0.2 Gpa, and a voltage breakdown of about 10.93 MV/cm.
An integrated circuit device comprising:
- spacers adjacent to a gate stack over a semiconductor fin;
- and
- a layer adjacent to the spacers, the layer comprising a first material with a density of about 2.92 g/cm3, a stress of about 0.2 Gpa, and a voltage breakdown of about 10.93 MV/cm.
An integrated circuit device comprising:
- a substrate with a channel region between a first source/drain region and a second source/drain region, wherein the first source/drain region has an oxygen penetration depth of less than about 16 Å;
- a gate stack overlying the channel region;
- spacers located along sidewalls of the gate stack;
- and
- silicon nitride interfacing with the spacers, the silicon nitride having a density of about 2.92 g/cm3, a stress of about 0.2 Gpa, and a voltage breakdown of about 10.93 MV/cm.
Dependencies are inferred from the claim text.