Method of manufacturing thin film by using atomic layer deposition method and method of manufacturing semiconductor device using the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of bit lines on a substrate;
• forming, on the plurality of bit lines, a mold layer including a plurality of mold openings exposing upper surfaces of the plurality of bit lines;
• forming a channel layer covering sidewalls and bottoms of the plurality of mold openings of the mold layer respectively within the plurality of mold openings;
• and
• forming a word line on the channel layer,
• wherein the forming of the channel layer includes forming the channel layer by using an atomic layer deposition method including at least one cycle,
• wherein the at least one cycle includes:
• supplying a metal precursor including one selected from indium (In), gallium (Ga), zinc (Zn), hafnium (Hf), titanium (Ti), aluminum (Al), or zirconium (Zr), onto a substrate to form a first adsorption layer including the metal precursor physically adsorbed onto the substrate;
• supplying a first purge gas onto the first adsorption layer;
• forming a second adsorption layer by supplying an inert gas in a plasma state onto the first adsorption layer;
• supplying a second purge gas onto the second adsorption layer;
• supplying a reactant gas as an oxidizing agent in a plasma state onto the second adsorption layer to allow the second adsorption layer to react with the reactant gas to form a metal oxide thin film;
• and
• supplying a third purge gas onto the metal oxide thin film.

A method of manufacturing a thin film by using an atomic layer deposition method including at least one cycle,

• wherein the at least one cycle includes:
• supplying a metal precursor onto a substrate for a first supply time to form a first adsorption layer including the metal precursor physically adsorbed onto the substrate;
• supplying a first purge gas onto the first adsorption layer for a first purge time;
• forming a second adsorption layer by supplying an inert gas in a plasma state onto the first adsorption layer for a second supply time;
• supplying a second purge gas onto the second adsorption layer for a second purge time;
• supplying a reactant gas in a plasma state onto the second adsorption layer for a third supply time to allow the second adsorption layer to react with the reactant gas to form a thin film;
• and
• supplying a third purge gas onto the thin film for a third purge time,
• wherein the second supply time is longer than the first supply time, the first purge time is longer than the first supply time, the second purge time is longer than the second supply time, and the inert gas is helium or a mixed gas of helium and argon.