Method of forming silicon nitride film and film forming apparatus
AssigneeTokyo Electron Limited
InventorsMunehito Kagaya, Yuji Otsuki, Yusuke Suzuki
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Abstract
A method of forming a silicon nitride film according to an aspect of the present disclosure forms a silicon nitride film in a recess formed in a surface of a substrate. The method includes a process of forming an adsorption-inhibiting region by exposing the substrate to plasma generated from an adsorption-inhibiting gas that contains a halogen gas and a non-halogen gas, a process of adsorbing a silicon-containing gas in a region other than the adsorption-inhibiting region, and a process of forming a silicon nitride film by exposing the substrate, on which the silicon-containing gas has been adsorbed, to plasma generated from a nitrogen-containing gas.
Claims20
A method of forming a silicon nitride film in a recess formed in a surface of a substrate, the method comprising:
- forming an adsorption-inhibiting region by exposing the substrate to plasma generated from an adsorption-inhibiting gas that contains a halogen gas and a non-halogen gas;
- adsorbing a silicon-containing gas in a region other than the adsorption-inhibiting region;
- and
- forming the silicon nitride film by exposing the substrate, on which the silicon-containing gas has been adsorbed, to plasma generated from a nitrogen-containing gas.
A film forming apparatus comprising:
- a processing container configured to accommodate a substrate having a recess formed in a surface thereof;
- a gas supplier configured to supply an adsorption-inhibiting gas, a silicon-containing gas, and a nitrogen-containing gas into the processing container;
- and
- a controller,
- wherein the adsorption-inhibiting gas contains a halogen gas and a non-halogen gas, and
- wherein the controller is configured to control the gas supplier to execute:
- forming an adsorption-inhibiting region by exposing the substrate to plasma generated from the adsorption-inhibiting gas;
- adsorbing the silicon-containing gas in a region other than the adsorption-inhibiting region;
- and
- forming a silicon nitride film by exposing the substrate, on which the silicon-containing gas has been adsorbed, to plasma generated from the nitrogen-containing gas.
Dependencies are inferred from the claim text.