Processing method, method of manufacturing semiconductor device, recording medium, and processing apparatus

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus, to perform:

• a first process of modifying a predetermined surface of a material, by performing a first operation including:
• (a1) supplying a precursor gas containing a first predetermined element and a halogen element to the material including the predetermined surface;
• (a2) after (a1), supplying a first modifying gas containing oxygen to the material;
• and
• (a3) after (a1), supplying a second modifying gas, which is different from the first modifying gas, to the material;
• and
• a second process of forming a film containing the first predetermined element on the modified predetermined surface after the first process, by performing a second operation a predetermined number of times, the second operation including:
• (b1) supplying the precursor gas to the material;
• and
• (b2) supplying a reaction gas to the material.

A processing apparatus, comprising:

• a gas supply system configured to supply, to a material including a predetermined surface, a precursor gas containing a first predetermined element and a halogen element, a first modifying gas containing oxygen, a second modifying gas different from the first modifying gas, and a reaction gas;
• and
• a controller configured to be capable of controlling the gas supply system so as to perform:
• a first process of modifying the predetermined surface, by performing a first operation including:
• (a1) supplying the precursor gas to the material;
• (a2) after (a1), supplying the first modifying gas to the material;
• and
• (a3) after (a1), supplying the second modifying gas to the material;
• and
• a second process of forming a film containing the first predetermined element on the modified predetermined surface after the first process, by performing a second operation a predetermined number of times, the second operation including:
• (b1) supplying the precursor gas to the material;
• and
• (b2) supplying the reaction gas to the material.