Sealing structure and manufacturing method therefor

A method for manufacturing a sealing structure, the method comprising:

• preparing a substrate in a chamber;
• forming a first material layer including a silicon nitride (SiNx) on the substrate;
• forming a second material layer including a silicon oxide (SiOx) on the first material layer;
• and
• forming a third material layer including the silicon nitride (SiNx) on the second material layer,
• wherein the forming of the first material layer, the forming of the second material layer, and the forming of the third material layer are performed by plasma-enhanced atomic layer deposition (PEALD),
• the method further comprising providing a fourth plasma having an atmosphere of nitrogen (N2) or ammonia (NH), after the forming of the first material layer and before the forming of the second material layer, for improved interfacial stability between the first material layer and the second material layer, and
• providing a fifth plasma having an atmosphere of oxygen (O2) and argon (Ar), after the forming of the second material layer and before the forming of the third material layer, for improved interfacial stability between the second material layer and the second material layer,
• wherein the first material layer, the second material layer, and the third material layer are all formed using diisopropylamino silane (DIPAS) having a structure represented by Chemical Formula 1,
• wherein a pressure of a first plasma used to form the first material layer and a pressure of a third plasma used to form the third material layer are higher than a pressure of a second plasma used to form the second material layer,
• and a exposure time of the first and third plasma used to form the first and third material layer is longer than a exposure time of the second plasma used to form the second material layer,