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US 2026/0092367 A1Published application
Film forming method
AssigneeTokyo Electron Limited
InventorsHiroki YAMADA, Ryota IFUKU, Takashi MATSUMOTO, Nobutake KABUKI
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Abstract
A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.
Claims11
A film forming method of forming a doped graphene film, comprising:
- loading a substrate into a processing container;
- performing a first process of forming a doped graphene film on the substrate using plasma of a first processing gas that includes a dopant gas and a carbon-containing gas;
- and
- after the first process, performing a second process of processing the doped graphene film using plasma of a second processing gas that includes the dopant gas and a noble gas.
1 more element
Dependencies are inferred from the claim text.