Plasma enhanced pulsed layer deposition

A process system for depositing a highly controlled layered film on a workpiece, the process system comprising:

• a process chamber;
• a workpiece;
• a plurality of first precursor sources coupled to the process chamber for providing a pulsed flow of at least one precursor therein;
• an energy source coupled to the process chamber for generating a plasma;
• a plasma adjusting system configured to repeat alternately the following sequence
• to turn on the plasma for about one second or longer to excite the precursors from the first precursor sources to promote a plasma-enhanced reaction of the precursors at the workpiece surface, and
• to turn off the plasma for about one second or longer to prevent plasma excitation of the precursors from the first precursor sources, whereby preventing a plasma-enhanced reaction of the precursors at the workpiece surface;
• whereby the pulsed flow of the precursors from the first precursor sources is substantially synchronized with the plasma adjusting system so that there is no precursor flow when the plasma is off and there is precursor flow when the plasma is on.