Selective material deposition

A method of depositing a metal containing-layer in a semiconductor processing chamber, the method comprising:

• delivering a processing gas into the semiconductor processing chamber during a time period, wherein the processing gas comprises a first precursor delivered at a first rate during the time period and etchants delivered at a second rate during the time period, and wherein the first precursor comprises at least one of molybdenum (Mo), titanium (Ti), cobalt (Co), tungsten (W), tantalum (Ta), nickel (Ni), zirconium (Zr), copper (Cu), or silver (Ag);
• sustaining a plasma formed from the first precursor present in the semiconductor processing chamber during at least a first portion of the time period;
• and
• depositing the metal containing-layer on at least a portion of a semiconductor structure during the time period until an endpoint thickness is reached.

A semiconductor processing chamber comprising:

• memory;
• and
• a controller coupled to the memory, the controller being configured to perform a method of depositing a metal containing-layer in the semiconductor processing chamber, the method comprising:
• delivering a processing gas into the semiconductor processing chamber during a time period, wherein the processing gas comprises a first precursor delivered at a first rate and etchants delivered at a second rate;
• sustaining a plasma formed from the first precursor present in the semiconductor processing chamber during at least a first portion of the time period;
• and
• depositing the metal containing-layer on at least a portion of a semiconductor structure during the time period until an endpoint thickness is reached.