Synos Technology, Inc.
Fremont, CA, US· latest recorded location
SYNOS TECHNOLOGY, INC. is named on 5 US grants and 39 published applications in this corpus. Its most frequent classification is C23C (Coating metallic material).
- Granted patents
- 5
- Published applications
- 39
- Inventors
- 6
- Granted in 2026 so far
- 0
- Most recent grant
- 6 Aug 2013
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2009 | 0 | 1 |
| 2010 | 0 | 10 |
| 2011 | 0 | 3 |
| 2012 | 3 | 13 |
| 2013 | 2 | 8 |
| 2014 | 0 | 4 |
By publication year.
Technology areas
Share of 44 documents
- C23CCoating metallic material36
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered10
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by8
- H01JElectric discharge tubes or discharge lamps7
- B05DProcesses for applying fluent materials to surfaces, in general3
- Y02EClean energy generation and storage3
- A01NPreservation of bodies of humans or animals or plants or parts thereof2
- B05CApparatus for applying fluent materials to surfaces, in general2
- D06MTreatment, not provided for elsewhere in class d06, of fibres, threads, yarns2
- H10FSolar cells and light sensors2
Recent patents
- Forming substrate structure by filling recesses with deposition material6 Aug 2013US 8,501,633 B2
- Vapor deposition reactor for forming thin film25 Jun 2013US 8,470,718 B2
- Vapor deposition reactor18 Dec 2012US 8,333,839 B2
- Forming substrate structure by filling recesses with deposition material11 Sep 2012US 8,263,502 B2
- Method for forming thin film using radicals generated by plasma4 Sep 2012US 8,257,799 B2
- Cooling substrate and atomic layer deposition apparatus using purge gas6 Mar 2014US 2014/0065307 A1
- Enhancing deposition process by heating precursor6 Feb 2014US 2014/0037846 A1
- Growing of gallium-nitrade layer on silicon substrate30 Jan 2014US 2014/0027777 A1
- Deposition of Graphene or Conjugated Carbons Using Radical Reactor30 Jan 2014US 2014/0030447 A1
- Reactor in deposition device with multi-staged purging structure19 Dec 2013US 2013/0337172 A1
Most cited
By later US patents