Cooling substrate and atomic layer deposition apparatus using purge gas
AssigneeSynos Technology, Inc.
InventorSang In Lee
Life of this patent
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AssigneeSynos Technology, Inc.
InventorSang In Lee
Estimating the term…
Cooling a heated substrate undergoing a deposition process (e.g., ALD, MLD or CVD) and a deposition reactor for performing the deposition process by routing a cooled purge gas through a path in the deposition reactor and then injecting the cooled purge gas onto the substrate. The deposition reactor may include a heater to heat precursor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. As a result of operating the heater and routing the heated precursor, the temperature of the substrate and the deposition reactor may be increased. To drop the temperature of the substrate and the deposition reactor, a purge gas cooled to a temperature lower than the heated precursor is injected onto the substrate via the deposition reactor
A method of depositing a layer of material on a substrate, comprising:
A deposition reactor for depositing a layer of material on a substrate, comprising:
Dependencies are inferred from the claim text.