Enhancing deposition process by heating precursor
AssigneeSynos Technology, Inc.
InventorsSang In Lee, Il Song Lee
Life of this patent
Estimating the term…
Abstract
Heating of precursor before exposing the substrate to the precursor for depositing material on the substrate using a deposition method (e.g., ALD, MLD or CVD). A reactor for injecting precursor onto the substrate includes a heater placed in a path between a channel connected to a source of the precursor and a reaction chamber of the reactor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. Alternatively or in addition to the heater, the reactor may inject a heated gas that mixes with the precursor to increase the temperature of the precursor before exposing the substrate to the precursor.
Claims18
A reactor for injecting a gas onto a substrate to deposit a material on the substrate, comprising:
- a body formed with a channel for carrying the gas, a reaction chamber filled with the gas provided by the channel, an exhaust portion for discharging the gas and a constriction zone between the reaction chamber and the exhaust portion, the constriction zone forming a passage that is narrower than the reaction chamber, the substrate passing by the reaction chamber for exposure to the gas;
- and
- a heater placed between the channel and the reaction chamber to heat the gas to a predetermined range of temperature.
A method of depositing a material on a substrate, comprising:
- routing a gas into a heater in a reactor via a channel formed in the reactor;
- increasing a temperature of the gas to a predetermined temperature by the heater;
- providing the gas into a reaction chamber in the reactor;
- exposing the substrate passing by the reaction chamber to the gas in the reaction chamber;
- and
- discharging gas remaining after exposure to the substrate to an exhaust portion of the reactor via a constriction zone that is narrower than the reaction chamber.
A method of depositing a material on a substrate, comprising:
- routing a first gas into a heater in a reactor via a first channel formed in the reactor;
- increasing a temperature of the first gas to a predetermined temperature by the heater;
- routing a second gas into a reaction chamber in the reactor;
- increasing the temperature of the second gas by mixing the first gas and the second gas in the reaction chamber;
- exposing the substrate passing by the reaction chamber to the first gas and the second gas in the reaction chamber;
- and
- discharging the first gas and the second gas remaining after exposure to the substrate to an exhaust portion of the reactor via a constriction zone that is narrower than the reaction chamber.
Dependencies are inferred from the claim text.