Reactor in deposition device with multi-staged purging structure
AssigneeSynos Technology, Inc.
InventorSang In Lee
Life of this patent
Estimating the term…
Abstract
Embodiments relate to a structure of reactors in a deposition device that enables efficient removal of excess material deposited on a substrate by using multiple-staged Venturi effect. In a reactor, constriction zones of different height are formed between injection chambers and an exhaust portion. As purge gas or precursor travels from injection chambers to the exhaust portion and passes the constriction zones, the pressure of the gas drops and the speed of the gas increase. Such changes in the pressure and speed facilitate removal of excess material deposited on the substrate.
Claims20
A deposition device for depositing material on a substrate, comprising:
- a susceptor configured to receive one or more substrates;
- and
- a reactor formed with:
- a first chamber configured to inject a first gas onto the one or more substrates passing across the first chamber;
- a second chamber configured to inject a second gas onto the one or more substrates passing across the second chamber;
- a first constriction zone configured to route the first gas from the first chamber to the second chamber over the one or more substrates, the first constriction zone formed between the first chamber and the second chamber, the first constriction zone configured so that a pressure of the first gas in the first constriction zone is lower than a pressure of the first gas in the first chamber and a speed of the first gas in the first constriction zone is higher than a speed of the first gas in the first chamber;
- an exhaust portion configured to discharge from the reactor the first gas and the second gas remaining after exposure to the one or more substrates;
- and
- a second constriction zone configured to route the first gas and the second gas from the second chamber to the exhaust portion over the one or more substrates, the second constriction zone formed between the second chamber and the exhaust portion, the second constriction zone configured so that a pressure of the second gas in the second constriction zone is lower than a pressure of the second gas in the second chamber and a speed of the second gas in the second constriction zone is higher than a speed of the second gas in the second chamber.
A method of depositing material on a substrate, comprising:
- causing a relative movement between a susceptor receiving one or more substrates and a reactor;
- providing a first gas into a first chamber formed in the reactor;
- injecting the first gas onto the one or more substrates passing across the first chamber;
- routing the first gas from the first chamber to a second chamber formed in the reactor over the one or more substrates via a first constriction zone formed in the reactor, a pressure of the first gas in the first constriction zone lower than a pressure of the first gas in the first chamber and a speed of the first gas in the first constriction zone higher than a speed of the first gas in the first chamber;
- routing the first gas from the second chamber to an exhaust portion formed in the reactor over the one or more substrates via a second constriction zone formed in the reactor;
- providing a second gas into the second chamber;
- injecting the second gas onto the one or more substrates passing across the second chamber;
- and
- routing the second gas from the second chamber to the exhaust portion over the one or more substrates via the second constriction zone, a pressure of the second gas in the second constriction zone lower than a pressure of the second gas in the second chamber and a speed of the second gas in the second constriction zone higher than a speed of the second gas in the second chamber.
Dependencies are inferred from the claim text.