Method for forming thin film using radicals generated by plasma
AssigneeSynos Technology, Inc.
InventorSang In Lee
Life of this patent
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Abstract
A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.
Claims18
A method for forming a thin film using radicals generated by plasma, comprising:
- making a first relative movement between a substrate and a deposition reactor in a direction parallel to a surface of the substrate for depositing the thin film;
- injecting a reactant precursor into a gap between a first electrode and a second electrode of the deposition reactor;
- generating radicals of the reactant precursor using plasma at the deposition reactor;
- injecting the source precursor into a region and another region within the deposition reactor via a channel formed in the first electrode;
- mixing the radicals with a source precursor in the region within the deposition reactor into first mixture;
- forming a first thin film on a portion of the surface of the substrate by exposing the portion of the surface of the substrate to the first mixture after making the first relative movement;
- making a second relative movement between the substrate and the deposition reactor in the direction parallel to the surface of the substrate;
- exposing the portion of the surface of the substrate to the source precursor that is not mixed with the radicals after making the second relative movement;
- making a third relative movement between the substrate and the deposition reactor in the direction parallel to the surface of the substrate;
- mixing the radicals with the source precursor in the other region within the deposition reactor into second mixture;
- and
- forming a second thin film on the first film by exposing the first film to the second mixture after making the third relative movement.
A method for forming a thin film using radicals generated by plasma, comprising:
- injecting reactant precursor into a gap between a first electrode and a second electrode of a deposition reactor;
- generating radicals of the reactant precursor in the gap by applying voltage across the first electrode and the second electrode;
- injecting the generated radicals towards a first region and a second region within the deposition reactor;
- injecting a source precursor to the first region, the second region and a third region between the first region and the second region, wherein the third region is not injected with the generated radicals;
- mixing the source precursor and the source precursor in the first region to form first mixture;
- mixing the source precursor and the source precursor in the second region to form second mixture;
- and
- exposing a portion of a surface of the substrate sequentially to the first mixture from the first region, the source precursor from the third region and the second mixture from the second region by moving the substrate relative to the first electrode and the second electrode in a direction parallel to the surface of the substrate to form a first layer and a second layer on the first layer, the first layer having composition different from the second layer.
Dependencies are inferred from the claim text.