Vapor deposition reactor for forming thin film
AssigneeSynos Technology, Inc.
InventorSang In Lee
Life of this patent
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Abstract
A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.
Claims14
A vapor deposition reactor for depositing material on a substrate, comprising:
- a chamber filled with a first material and configured to receive a substrate, the substrate exposed to the first material in the chamber to adsorb the first material;
- and
- a reaction module comprising an injection unit placed within the chamber to face the substrate and inject a second material onto the substrate, the substrate deposited with a layer of material by reaction of the second material with the first material adsorbed in the substrate or substitution of a portion of the first material adsorbed in the substrate with a portion of the second material, the substrate exposed to the second material as the substrate passes the injection unit by a relative motion between the substrate and the reaction module.
Dependencies are inferred from the claim text.