Growing of gallium-nitrade layer on silicon substrate
AssigneeSynos Technology, Inc.
InventorSang In LEE
Life of this patent
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Abstract
Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to distribute and accommodate stress caused by materials deposited on the substrate. An interface adjustment layer (e.g., transition metal silicide layer) is formed on the porous silicon substrate to promote growth of a buffer layer. A buffer layer formed for GaN layer may then be formed on the silicon substrate. A seed-layer for epitaxial growth of GaN layer is then formed on the buffer layer.
Claims22
A method of forming a gallium nitride layer on a silicon substrate, comprising:
- epitaxially growing an interface adjustment layer on the silicon substrate to promote growth of a buffer layer, enhance quality of the buffer layer or retain crystallinity of the buffer layer;
- epitaxially growing the buffer layer to buffer crystallographic misfits between the silicon substrate and the gallium nitride layer on the interface adjustment layer;
- and
- epitaxially growing the gallium nitride layer on the buffer layer.
A semiconductor structure comprising:
- a silicon substrate;
- an interface adjustment layer epitaxially grown on the silicon substrate to promote growth of a buffer layer, enhance the quality of the buffer layer or retain crystallity of the buffer layer;
- the buffer layer epitaxially grown on the interface adjustment layer;
- and
- a gallium nitride layer epitaxially grown on the buffer layer.
An electronic component comprising a semiconductor structure, the semiconductor structure comprising:
- a silicon substrate;
- an interface adjustment layer epitaxially grown on the silicon substrate to enhance the quality of the buffer layer or retain crystallity of the buffer layer;
- the buffer layer epitaxially grown on the interface adjustment layer;
- and
- a gallium nitride layer epitaxially grown on the buffer layer.
Dependencies are inferred from the claim text.