Vapor deposition reactor
AssigneeSynos Technology, Inc.
InventorJae-eung Oh
Life of this patent
Estimating the term…
Abstract
A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge/pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.
Claims20
A vapor deposition reactor being configured to make a substrate pass by the reactor through a relative motion between the substrate and the reactor in a non-contact state, comprising:
- a first injection unit having a first space for receiving a precursor or a reactant and exposing the substrate to the precursor or reactant, the precursor or reactant is supplied to the first space through a precursor or reactant supply channel opening into the first space;
- a first exhaust unit having a second space for receiving a purge gas and exposing the substrate to the purge gas, the purge gas is supplied to the second space through a purge gas supply channel opening into the second space, the first exhaust unit exhausting the precursor or reactant and the purge gas by pumping the precursor or reactant and the purge gas through an exhaust channel opening into the second space;
- a second injection unit having a third space for receiving a reactant and exposing the substrate to the reactant, the reactant is supplied to the third space through a reactant supply channel opening into the third space;
- and
- a second exhaust unit having a fourth space for receiving the purge gas and exposing the substrate to the purge gas through a purge gas supply channel opening into the fourth space, the second exhaust unit exhausting the reactant and the purge gas by pumping the reactant and the purge gas through an exhaust channel opening into the fourth space;
- wherein the first injection unit, the first exhaust unit, the second injection unit and the second exhaust unit are arranged along a direction of the relative motion between the substrate and the reactor and include guard barriers to control the flow of the precursor, reactant, or purge gas between the first, second, third and fourth spaces;
- and
- wherein deposition conditions are varied according to a pressure in the first injection unit and the second injection unit.
Dependencies are inferred from the claim text.