Method for depositing boron nitride
AssigneeASM IP Holding B.V.
InventorsMiguel Sérgio De Abreu Neto, Jihee Jeon, Imane Abdellaoui, Timothee Blanquart, René Henricus Jozef Vervuurt
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Abstract
Methods for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods that can be used for depositing a boron nitride film by a PECVD process. The method comprises providing a substrate into a reaction chamber, and executing a cyclical deposition process comprising a plurality of deposition cycles, ones from the plurality of deposition cycles including providing a boron precursor into the reaction chamber and providing a deposition plasma gas into the reaction chamber.
Claims17
A method for forming a film comprising boron nitride on a surface of a substrate, the method comprising:
- providing a substrate into a reaction chamber;
- and
- executing a cyclical deposition process comprising a plurality of deposition cycles, ones from the plurality of deposition cycles comprising:
- pulsing a boron precursor into the reaction chamber;
- providing a deposition plasma gas into the reaction chamber;
- and
- generating a deposition plasma,
- wherein the boron precursor has a structure that corresponds to the general formula:
- wherein at least two of R1, R2, R3, R4, R5, and R6 are a halogen, and
- wherein, during the ones from the plurality of deposition cycles, the deposition plasma is provided continuously into the reaction chamber for a first duration, and wherein the boron precursor is pulsed into the reaction chamber for a second duration which is less than the first duration.
Dependencies are inferred from the claim text.