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US 2026/0146321 A1Published application
Method to deposit a silicon carbide layer
AssigneeASM IP Holding B.V.
InventorsVille Liimatainen, René Henricus Jozef Vervuurt, Viljami Pore
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Abstract
A method for depositing a silicon carbide layer on a substrate is disclosed. The method including: providing a substrate in a reaction chamber; providing a precursor and a reactant in the reaction chamber and forming a soft plasma in the reaction chamber; and purging the reaction chamber. Further, it included providing an inert gas in the reaction chamber and forming a strong plasma in the reaction chamber with a larger power than the soft plasma.
Claims21
A method to deposit a silicon carbide layer on a substrate, the method comprising:
- providing a substrate in a reaction chamber;
- providing a precursor and a reactant in the reaction chamber and forming a soft plasma in the reaction chamber;
- purging the reaction chamber;
- and,
- providing an inert gas in the reaction chamber and forming a strong plasma in the reaction chamber with a larger power than the soft plasma.
2 more elements
Dependencies are inferred from the claim text.