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US 12,616,006 B2Granted
Deuterium-containing films
AssigneeApplied Materials, Inc.
InventorsSean M. Seutter, Mun Kyu Park, Hien M Le, Chih-Chiang Chuang
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Abstract
Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
Claims14
A high density plasma (HDP) chemical vapor deposition (CVD) chamber comprising:
- a chamber body comprising a top and at least one side wall defining a plasma cavity;
- a first gas inlet centrally located in the top of the chamber body, the first gas inlet configured to deliver a flow of a plasma comprising a deuterium-containing precursor to the plasma cavity;
- a second gas inlet located in the at least one side wall of the chamber body, the second gas inlet configured to deliver a flow of the plasma comprising the deuterium-containing precursor to the plasma cavity;
- a top coil with antennae in the top of the chamber body;
- at least one side coil in the at least one side wall of the chamber body;
- a multi-zone susceptor, each zone having independent temperature control;
- and
- a controller connected to and configured to independently control each of the first gas inlet, the second gas inlet, the top coil, the at least one side coil, and the multi-zone susceptor,
- wherein the controller causes the high density plasma (HDP) chemical vapor deposition (CVD) chamber to perform operations of modifying a first dielectric film deposited on a substrate by exposing the first dielectric film to the plasma comprising the deuterium-containing precursor to form a modified dielectric film containing deuterium, wherein the first dielectric film is substantially free of hydrogen and deuterium, wherein the plasma has a pressure in a range of about 0.1 to about 500 millitorr.
6 more elements
A high density plasma (HDP) chemical vapor deposition (CVD) chamber comprising:
- a chamber body comprising a top and at least one side wall defining a plasma cavity;
- a first gas inlet centrally located in the top of the chamber body, the first gas inlet configured to deliver a flow of a plasma comprising a deuterium-containing precursor to the plasma cavity;
- a second gas inlet located in the at least one side wall of the chamber body, the second gas inlet configured to deliver a flow of the plasma comprising the deuterium-containing precursor to the plasma cavity;
- a top coil with antennae in the top of the chamber body;
- at least one side coil in the at least one side wall of the chamber body;
- a multi-zone susceptor, each zone having independent temperature control;
- and
- a controller connected to and configured to independently control each of the first gas inlet, the second gas inlet, the top coil, the at least one side coil, and the multi-zone susceptor, wherein the controller causes the high density plasma (HDP) chemical vapor deposition (CVD) chamber to perform operations of exposing a substrate with a first dielectric film substantially free of hydrogen and deuterium deposited thereon to the plasma comprising the deuterium-containing precursor to form a modified deuterium-containing dielectric film on the substrate, wherein the plasma has a power in a range of about 500 to about 20,000 watts.
5 more elements
Dependencies are inferred from the claim text.