Atomic layer deposition and vapor deposition reactor with in-chamber microplasma source

An atomic layer deposition reactor system, comprising:

• a reactor chamber;
• an array of microcavity or microchannel plasma devices located within the reactor chamber, the array of microcavity or microchannel plasma devices including a first electrode and a second electrode electrically and physically isolated from a plasma region located in the microcavities or microchannels;
• an inlet extending from outside the reactor chamber to the plasma region of the array of microcavity or microchannel plasma devices;
• a non-plasma medium deposition precursor source connected to the inlet;
• a plasma medium deposition precursor source connected to the inlet;
• a substrate holder within the reactor chamber;
• an outlet from the plasma region of the array of microcavity or microchannel plasma devices positioned to disperse plasma products over the surface of a substrate on the substrate holder;
• control valves located outside the deposition chamber;
• a controller configured to control the control valves to provide ratios, pressures, flow rates, and timing sequences for the non-plasma medium deposition precursor source and the plasma medium deposition precursor source to perform atomic layer deposition using both of the precursors;
• and
• an exhaust from the reactor chamber.