H10W 20/4446
Refractory-metal alloys
Official title: {Refractory-metal alloys}
H10W20/4446 (Refractory-metal alloys) appears on 186 US grants and 230 published applications in this corpus.
Search patents in H10W- Granted patents
- 186
- Published applications
- 230
- Assignees
- 55
- Inventors
- 465
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 0 | 3 |
| 2013 | 4 | 4 |
| 2014 | 4 | 8 |
| 2015 | 8 | 19 |
| 2016 | 16 | 18 |
| 2017 | 20 | 20 |
| 2018 | 30 | 28 |
| 2019 | 18 | 18 |
| 2020 | 16 | 18 |
| 2021 | 11 | 10 |
| 2022 | 15 | 22 |
| 2023 | 10 | 14 |
| 2024 | 12 | 11 |
| 2025 | 16 | 18 |
| 2026 | 5 | 16 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit devices including metal structures having a curved interface and methods of forming the same11 Aug 2026US 12,707,946 B2Samsung Electronics Co., Ltd.
- Incorporation of superlattice semi-metals for scaled interconnects23 Jun 2026US 12,666,956 B2Intel Corporation
- Interconnect structure16 Jun 2026US 12,660,593 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnects including graphene capping and graphene barrier layers3 Feb 2026US 12,543,550 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Laminated structure including metal silicide, method of manufacturing the same, and semiconductor device including the laminated structure24 Sep 2026US 2026/0293268 A1Samsung Electronics Co., Ltd.
- Ruthenium seeding for corrosion free molybdenum growth17 Sep 2026US 2026/0282856 A1APPLIED Materials.Inc.
- Semiconductor device and method of manufacturing the same17 Sep 2026US 2026/0282884 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Trench capacitor with bottom barrier electrode25 Jun 2026US 2026/0181995 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for producing interconnections25 Jun 2026US 2026/0182355 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
Most cited
By later US patents
- Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology532US 7,235,482 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2007
- Cobalt based interconnects and methods of fabrication thereof28US 9,514,983 B2Intel Corporation · 2016
- Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof25US 10,115,735 B2SanDisk Technologies LLC · 2018
- Three-dimensional non-volatile memory device having a silicide source line and method of making thereof18US 9,559,117 B2SanDisk Technologies LLC · 2017
- Subtractive patterning to define circuit components14US 8,617,982 B2Novellus Systems, Inc. · 2013