Three-dimensional non-volatile memory device having a silicide source line and method of making thereof

A memory device, comprising:

• a stack of alternating layers of a first material and a second material different from the first material over a substrate, wherein the layers of the second material form a plurality of conductive control gate electrodes;
• a plurality of NAND memory strings extending through the stack, wherein each NAND memory string comprises:
• a semiconductor channel which contains at least a first portion which extends substantially perpendicular to a major surface of the substrate;
• and
• at least one memory film located between the semiconductor channel and the plurality of conductive control gate electrodes;
• a source line comprising a metal silicide material which extends though the stack;
• a source region located in a second portion of the semiconductor channel extending substantially parallel to the major surface of the substrate;
• and
• an insulating material is located between the source line and the plurality of conductive control gate electrodes.