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US 10,115,735 B2Granted
Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof
AssigneeSanDisk Technologies LLC
InventorsFumitaka Amano, Kensuke Ishikawa, Shinya Inoue, Michiaki Sano
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Abstract
A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.
Claims9
A semiconductor device, comprising:
- a silicon surface;
- a titanium silicide layer contacting the silicon surface;
- a first titanium nitride layer located over the titanium silicide layer;
- a titanium oxynitride layer contacting the first titanium nitride layer;
- a second titanium nitride layer contacting the titanium oxynitride layer;
- and
- a metallic fill material portion located over the second titanium nitride layer.
4 more elements
Dependencies are inferred from the claim text.