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US 12,666,956 B2Granted
Incorporation of superlattice semi-metals for scaled interconnects
AssigneeIntel Corporation
InventorAbhishek Anil Sharma
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Abstract
Embodiments disclosed herein include an integrated circuit structure. In an embodiment, the integrated circuit structure comprises an interlayer dielectric (ILD). and an interconnect over the ILD. In an embodiment, the interconnect comprises a plurality of first layers, where the first layers comprise a metal, and a plurality of second layer in an alternating pattern with the plurality of first layers. In an embodiment, the second layers comprise a two-dimensional (2D) material.
Claims20
An integrated circuit structure, comprising:
- an interlayer dielectric (ILD);
- and
- an interconnect over the ILD, wherein the interconnect comprises:
- a plurality of first layers, wherein each of the first layers comprise a metal;
- a plurality of second layers, wherein each of the second layers comprise a two-dimensional (2D) material, wherein the 2D material is a transition metal dichalcogenide (TMD), and wherein first layers and second layers are stacked over each other in an alternating pattern.
2 more elements
An integrated circuit structure, comprising:
- an interlayer dielectric (ILD);
- and
- an interconnect over the ILD, wherein the interconnect comprises:
- a plurality of first layers, wherein each of the first layers comprise a metal;
- a plurality of second layers, wherein each of the second layers comprise a two-dimensional (2D) material, and wherein first layers and second layers are stacked over each other in an alternating pattern, wherein the plurality of second layers comprises at least a second layer with a first material composition and a second layer with a second material composition that is different than the first material composition.
2 more elements
Dependencies are inferred from the claim text.