H10W 20/087
Involving multiple stacked pre-patterned masks
Official title: {involving multiple stacked pre-patterned masks}
H10W20/087 (Involving multiple stacked pre-patterned masks) appears on 970 US grants and 1,044 published applications in this corpus.
Search patents in H10W- Granted patents
- 970
- Published applications
- 1,044
- Assignees
- 158
- Inventors
- 1,575
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 5 | 0 |
| 2000 | 15 | 0 |
| 2001 | 23 | 10 |
| 2002 | 28 | 29 |
| 2003 | 33 | 59 |
| 2004 | 32 | 37 |
| 2005 | 29 | 47 |
| 2006 | 41 | 53 |
| 2007 | 31 | 40 |
| 2008 | 25 | 52 |
| 2009 | 37 | 29 |
| 2010 | 25 | 26 |
| 2011 | 32 | 20 |
| 2012 | 19 | 35 |
| 2013 | 34 | 29 |
| 2014 | 41 | 44 |
| 2015 | 34 | 48 |
| 2016 | 54 | 46 |
| 2017 | 67 | 60 |
| 2018 | 51 | 60 |
| 2019 | 56 | 62 |
| 2020 | 65 | 56 |
| 2021 | 46 | 44 |
| 2022 | 32 | 44 |
| 2023 | 30 | 47 |
| 2024 | 29 | 19 |
| 2025 | 38 | 31 |
| 2026 | 14 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Via patterning using multiple photo multiple etch477US 9,754,818 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for maximizing air gap in back end of the line interconnect through via landing modification318US 9,837,355 B2International Business Machines Corporation · 2017
- Organic low K dielectric etch with NH3 chemistry235US 6,743,732 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2004
- Adjustable self-aligned air gap dielectric for low capacitance wiring228US 7,071,532 B2International Business Machines Corporation · 2006
- Dual damascene processing for semiconductor chip interconnects216US 6,140,226 AInternational Business Machines Corporation · 2000