Damascene processes
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Han Chen, Shih-Yu Chang, Chien-Chih Chiu
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Abstract
Provided are semiconductor structures and methods for fabricating such structures. A method includes forming a conductive via over a substrate; forming a dielectric layer over the conductive via and the substrate; patterning a mask over the dielectric layer; performing an etch process to etch the dielectric layer through the mask to form a trench over the conductive via, wherein the trench extends to a trench bottom formed by the dielectric layer, and wherein the trench bottom intersects the conductive via; and forming a conductive structure in the trench.
Claims20
A method comprising:
- forming a conductive via over a substrate;
- forming a dielectric layer over the conductive via and the substrate;
- patterning a mask over the dielectric layer;
- performing an etch process to etch the dielectric layer through the mask to form a trench over the conductive via, wherein the trench extends to a trench bottom formed by the dielectric layer, and wherein the trench bottom intersects the conductive via;
- and
- forming a conductive structure in the trench.
A semiconductor structure comprising:
- a semiconductor substrate;
- a conductive via extending upward from the substrate to an upper surface;
- and
- a conductive trench located over the conductive via, wherein the upper surface of the conductive via is encapsulated by the conductive trench.
A semiconductor structure comprising:
- a semiconductor substrate;
- an etch stop layer located over the substrate;
- a lower dielectric layer located over the etch stop layer;
- a first lower conductive via extending through the first dielectric layer and etch stop layer into contact with the semiconductor substrate;
- and
- a second lower conductive via in the first dielectric layer, wherein the second lower conductive is separated from the etch stop layer by the first dielectric layer.
Dependencies are inferred from the claim text.