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US 12,757,712 B2Granted
Semiconductor structure and method for manufacturing same
AssigneeChangxin Memory Technologies, Inc.
InventorYuanhao Gao
Life of this patent
Estimating the term…
Abstract
A method for manufacturing method semiconductor includes: providing a base; forming an annular sacrificial blocking layer in the base; forming an etched hole in the base, in which the etched hole is located at an inner side of the annular sacrificial blocking layer; and removing the annular sacrificial blocking layer to obtain an interconnecting hole, in which a width of an upper part of the interconnecting hole is greater than a width of a lower part of the interconnecting hole.
Claims7
A method for manufacturing a semiconductor structure, comprising:
- providing a base;
- forming an annular sacrificial blocking layer in the base;
- forming an etched hole in the base, the etching hole being located at an inner side of the annular sacrificial blocking layer;
- and
- removing the annular sacrificial blocking layer to obtain an interconnecting hole, a width of an upper part of the interconnecting hole being greater than a width of a lower part of the interconnecting hole;
- wherein the base comprises a substrate and a dielectric layer located on a surface of the substrate;
- and forming the annular sacrificial blocking layer in the base comprises:
- forming a first patterned mask layer on a surface of the dielectric layer, the first patterned mask layer having an annular opening, and the annular opening defining a shape and a position of an annular trench;
- etching the dielectric layer based on the first patterned mask layer to form the annular trench in the dielectric layer;
- removing the first patterned mask layer;
- forming a sacrificial material layer on the surface of the dielectric layer, the sacrificial material layer filling up the annular trench and covering the surface of the dielectric layer;
- and
- removing the sacrificial material layer covering the surface of the dielectric layer, such that the sacrificial material layer retained in the annular trench forms the annular sacrificial blocking layer;
- wherein forming the etched hole in the base comprises:
- forming a second patterned mask layer on the surface of the dielectric layer, the second patterned mask layer having an opening pattern, and the opening pattern exposes the annular sacrificial blocking layer and the dielectric layer located at the inner side of the annular sacrificial blocking layer;
- etching the base based on the second patterned mask layer to form the etched hole;
- and
- removing the second patterned mask layer.
15 more elements
A method for manufacturing a semiconductor structure, comprising:
- providing a base;
- forming an annular sacrificial blocking layer in the base;
- forming an etched hole in the base, the etching hole being located at an inner side of the annular sacrificial blocking layer;
- and
- removing the annular sacrificial blocking layer to obtain an interconnecting hole, a width of an upper part of the interconnecting hole being greater than a width of a lower part of the interconnecting hole;
- wherein the method further comprises:
- after removing the annular sacrificial blocking layer to obtain the interconnecting hole,
- forming a conductive structure in the interconnecting hole, the conductive structure filling up the interconnecting hole;
- wherein the method further comprises:
- before forming the conductive structure in the interconnecting hole,
- forming a pad oxide layer at least on a sidewall and a bottom of the interconnecting hole, the conductive structure being located on a surface of the pad oxide layer;
- and
- wherein the method further comprises:
- after forming the conductive structure in the interconnecting hole,
- thinning a back surface of the base until the conductive structure is exposed to form a conductive interconnecting structure.
12 more elements
Dependencies are inferred from the claim text.