US 12,713,893 B2 · Conductive structure in semiconductor structure and method for forming the same

Abstract

A method for manufacturing a semiconductor structure is provided. The semiconductor structure includes an aluminum-containing layer and an etch stop layer formed over the aluminum-containing layer. The semiconductor structure further includes a carbon-containing dielectric layer formed over the etch stop layer. The semiconductor structure further includes a metal line formed in an upper portion of the carbon-containing dielectric layer. The semiconductor structure further includes a conductive via formed in a lower portion of the carbon-containing dielectric layer and through the etch stop layer and the aluminum-containing layer. The semiconductor structure further includes a barrier layer interposing the first sidewall of the metal line and carbon-containing dielectric layer and interposing the second sidewall of the conductive via and the carbon-containing dielectric layer.

Claims20

Dependent claims

A semiconductor structure, comprising:

an aluminum-containing layer;
an etch stop layer formed over the aluminum-containing layer;
a carbon-containing dielectric layer formed over the etch stop layer, wherein an atomic concentration of carbon in the carbon-containing dielectric layer is in a range from about 15% to about 35%;
a metal line formed in an upper portion of the carbon-containing dielectric layer, wherein the metal line has a top surface and a first sidewall connected to the top surface;
a conductive via formed in a lower portion of the carbon-containing dielectric layer and through the etch stop layer and the aluminum-containing layer, wherein the conductive via has a second sidewall adjoining the first sidewall of the metal line;
and
a barrier layer interposing the first sidewall of the metal line and carbon-containing dielectric layer and interposing the second sidewall of the conductive via and the carbon-containing dielectric layer,
wherein the metal line, the conductive via, and the barrier layer comprise a same dopant.

5 more elements

A semiconductor structure, comprising:

a first aluminum-containing layer, a first etch stop layer, and a first carbon-containing dielectric layer sequentially stacked in a first direction over a substrate;
a first metal line formed through an upper portion of the first carbon-containing dielectric layer and longitudinally oriented in a second direction that is different from the first direction, wherein the first metal line comprises a periphery region and a middle region surrounded by the periphery region, an atomic concentration of first dopants in the periphery region is greater than an atomic concentration of the first dopants in the middle region;
a first conductive via formed through a lower portion of the first carbon-containing dielectric layer, the first etch stop layer, and the first aluminum-containing layer;
and
a first barrier layer covering a slope sidewall of the first carbon-containing dielectric layer in a cross-sectional view along a third direction that is different from the first direction and the second direction.

2 more elements

A method for manufacturing a semiconductor structure, comprising:

forming an aluminum-containing layer;
forming an etch stop layer over the aluminum-containing layer;
forming a carbon-containing dielectric layer over the etch stop layer, wherein an atomic concentration of carbon in the carbon-containing dielectric layer is greater than 15%;
forming a via opening and a line trench in the carbon-containing dielectric layer, wherein the via opening passes through the etch stop layer and partially extends into the aluminum-containing layer, so that a bottom surface of the via opening is lower than a top surface of the aluminum-containing layer while is higher than a bottom surface of the aluminum-containing layer;
etching through the aluminum-containing layer so that the via opening extends through the aluminum-containing layer;
and
forming a conductive structure in the via opening and the line trench.

4 more elements

Dependencies are inferred from the claim text.

Conductive structure in semiconductor structure and method for forming the same

Life of this patent

Conductive structure in semiconductor structure and method for forming the same

Life of this patent

Abstract

Claims20