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US 12,701,976 B2Granted
Etch profile control of interconnect structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu Lun Ke, Yu-Wei Kuo, Yi-Wei Chiu, Hung Jui Chang
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Abstract
A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.
Claims20
A method, comprising:
- forming a stack on a substrate, wherein the stack comprises an etch stop layer (ESL), a liner, and a metal oxide layer in contact with the liner, and wherein the substrate comprises a conductive structure;
- forming an interlayer dielectric (ILD) layer on the stack, wherein the ILD layer is in contact with the metal oxide layer;
- forming a first opening in the ILD layer to expose a top surface of the metal oxide layer;
- etching, through the first opening, the metal oxide layer with a first etching process to form a second opening in the metal oxide layer, wherein the second opening exposes a top surface of the liner;
- and
- etching, through the second opening, the liner and the ESL with a second etching process different from the first etching process to form a third opening in the metal oxide layer, the liner, and the ESL, wherein the third opening exposes the conductive structure.
3 more elements
A method, comprising:
- etching a capping layer, a first silicon-based layer, and a low temperature oxide (LTO) layer to form a first opening in the first silicon-based layer and the LTO layer while removing the capping layer;
- etching, through the first opening, a nitrogen free anti-reflective layer (NFARL) and an interlayer dielectric (ILD) layer below the LTO layer to form a second opening in the NFARL and the ILD layer;
- and
- etching, through the second opening, a metal oxide layer, a liner, and an etch stop layer (ESL) to form a third opening in the ILD, the metal oxide layer, the liner, and the ESL.
1 more element
A method, comprising:
- patterning first and second hard mask layers to form a first opening in the first and second hard mask layers;
- forming a stack over the first opening, wherein the stack comprises an organic layer, a low temperature oxide (LTO) layer, a first silicon-based layer, and a capping layer, and wherein the organic layer fills the first opening, wherein the first silicon-based layer is between the LTO layer and the capping layer;
- etching the stack through the first opening to form a second opening in a nitrogen free anti-reflective layer (NFARL) and an interlayer dielectric (ILD) layer below the LTO layer;
- and
- etching, through the second opening, a metal oxide layer, a liner, and an etch stop layer (ESL) below the ILD to form a third opening in the metal oxide layer, the liner, and the ESL.
2 more elements
Dependencies are inferred from the claim text.