H10P 14/6687
The compound comprising silicon and nitrogen
Official title: {the compound comprising silicon and nitrogen}
H10P14/6687 (The compound comprising silicon and nitrogen) appears on 933 US grants and 1,191 published applications in this corpus.
Search patents in H10P- Granted patents
- 933
- Published applications
- 1,191
- Assignees
- 190
- Inventors
- 1,780
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 5 | 0 |
| 2000 | 2 | 0 |
| 2001 | 7 | 2 |
| 2002 | 13 | 19 |
| 2003 | 9 | 13 |
| 2004 | 15 | 22 |
| 2005 | 12 | 28 |
| 2006 | 21 | 32 |
| 2007 | 12 | 31 |
| 2008 | 14 | 16 |
| 2009 | 19 | 43 |
| 2010 | 29 | 37 |
| 2011 | 26 | 23 |
| 2012 | 23 | 42 |
| 2013 | 42 | 34 |
| 2014 | 22 | 50 |
| 2015 | 32 | 68 |
| 2016 | 64 | 67 |
| 2017 | 60 | 49 |
| 2018 | 56 | 92 |
| 2019 | 65 | 92 |
| 2020 | 70 | 67 |
| 2021 | 63 | 63 |
| 2022 | 51 | 72 |
| 2023 | 52 | 77 |
| 2024 | 46 | 66 |
| 2025 | 49 | 70 |
| 2026 | 26 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Substrate processing method and apparatus22 Sep 2026US 12,745,611 B2ASM IP Holding B. V.
- Substrate processing method15 Sep 2026US 12,740,350 B2ASM IP Holding B. V.
- Substrate processing method15 Sep 2026US 12,740,352 B2ASM IP Holding B. V.
- Semiconductor device and method8 Sep 2026US 12,733,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium25 Aug 2026US 12,721,065 B2Kokusai Electric Corporation
- Transistor isolation structures8 Oct 2026US 2026/0314046 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing method6 Aug 2026US 2026/0231703 A1ASM IP Holding B. V.
- Method for processing substrate and apparatus for processing substrate30 Jul 2026US 2026/0223610 A1Tokyo Electron Limited
- Source/drain regions in stacking transistors and methods of forming the same2 Jul 2026US 2026/0190470 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002
- Method and system for improving dielectric film quality for void free gap fill649US 7,541,297 B2APPLIED Materials.Inc. · 2009
- Precursors for depositing silicon containing films and processes thereof627US 7,122,222 B2Air Products and Chemicals, Inc. · 2006
- Method of forming conformal dielectric film having Si-N bonds by PECVD603US 7,919,416 B2ASM Japan K .K. · 2011
- Method of forming conformal film having si-N bonds on high-aspect ratio pattern597US 8,394,466 B2ASM Japan K .K. · 2013