Back to results
US 12,733,526 B2Granted
Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYin-Jie Pan, Yu-Yun Peng
Life of this patent
Estimating the term…
Abstract
A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
Claims20
A semiconductor device comprising:
- a conductive material embedded within a dielectric material;
- and
- a dielectric layer over the conductive material and the dielectric material, wherein the dielectric layer has isolated pores, and wherein the dielectric layer has a scaling factor less than or equal to about 1.8.
A semiconductor device comprising:
- a first etch stop layer over a first conductive element within a metallization layer;
- a second etch stop layer over the first etch stop layer;
- a first dielectric layer over the second etch stop layer, wherein the first dielectric layer is a low diffusivity channel-less porous low-k material;
- isolated pores located within the first dielectric layer;
- and
- a second conductive element extending through the first dielectric layer, the second etch stop layer, and the first etch stop layer, wherein the second conductive element comprises:
- a via portion at least partially located in each of the first dielectric layer, the second etch stop layer, and the first etch stop layer;
- and
- a trench portion at least partially located within the first dielectric layer.
6 more elements
A semiconductor device comprising:
- a conductive material within a first dielectric material;
- a second dielectric material over the first dielectric material, the second dielectric material comprising isolated pores and having a scaling factor less than or equal to about 1.8;
- and
- a via extending at least partially through the second dielectric material.
1 more element
Dependencies are inferred from the claim text.