H10P 14/66
Characterised by the type of materials
Official title: {characterised by the type of materials}
H10P14/66 (Characterised by the type of materials) appears on 8,062 US grants and 8,237 published applications in this corpus.
Search patents in H10P- Granted patents
- 8,062
- Published applications
- 8,237
- Assignees
- 1,136
- Inventors
- 11,975
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 22 | 0 |
| 1978 | 12 | 0 |
| 1979 | 13 | 0 |
| 1980 | 12 | 0 |
| 1981 | 7 | 0 |
| 1982 | 11 | 0 |
| 1983 | 6 | 0 |
| 1984 | 10 | 0 |
| 1985 | 11 | 0 |
| 1986 | 19 | 0 |
| 1987 | 26 | 0 |
| 1988 | 19 | 0 |
| 1989 | 22 | 0 |
| 1990 | 25 | 0 |
| 1991 | 26 | 0 |
| 1992 | 25 | 0 |
| 1993 | 41 | 0 |
| 1994 | 45 | 0 |
| 1995 | 50 | 0 |
| 1996 | 53 | 0 |
| 1997 | 66 | 0 |
| 1998 | 109 | 0 |
| 1999 | 161 | 0 |
| 2000 | 241 | 0 |
| 2001 | 362 | 133 |
| 2002 | 352 | 352 |
| 2003 | 350 | 428 |
| 2004 | 366 | 474 |
| 2005 | 297 | 501 |
| 2006 | 347 | 501 |
| 2007 | 298 | 335 |
| 2008 | 245 | 301 |
| 2009 | 241 | 299 |
| 2010 | 249 | 224 |
| 2011 | 239 | 187 |
| 2012 | 181 | 191 |
| 2013 | 227 | 201 |
| 2014 | 171 | 249 |
| 2015 | 228 | 295 |
| 2016 | 256 | 268 |
| 2017 | 215 | 251 |
| 2018 | 250 | 364 |
| 2019 | 284 | 377 |
| 2020 | 340 | 415 |
| 2021 | 290 | 339 |
| 2022 | 280 | 379 |
| 2023 | 251 | 398 |
| 2024 | 256 | 316 |
| 2025 | 285 | 315 |
| 2026 | 157 | 144 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Treatment to control deposition rate29 Sep 2026US 12,751,223 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Alkoxydisiloxanes and dense organosilica films made therefrom29 Sep 2026US 12,751,224 B2Versum Materials US, LLC
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Transistor isolation structures8 Oct 2026US 2026/0314046 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Poly-silicon based word line for 3d memory1 Oct 2026US 2026/0304772 A1Applied Materials, Inc. Santa Clara
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002