H10P 14/662
Laminate layers
Official title: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}
H10P14/662 (Laminate layers) appears on 2,754 US grants and 2,477 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,754
- Published applications
- 2,477
- Assignees
- 550
- Inventors
- 4,947
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 8 | 0 |
| 1978 | 7 | 0 |
| 1979 | 6 | 0 |
| 1980 | 5 | 0 |
| 1981 | 4 | 0 |
| 1982 | 6 | 0 |
| 1983 | 4 | 0 |
| 1984 | 4 | 0 |
| 1985 | 5 | 0 |
| 1986 | 9 | 0 |
| 1987 | 12 | 0 |
| 1988 | 7 | 0 |
| 1989 | 9 | 0 |
| 1990 | 10 | 0 |
| 1991 | 8 | 0 |
| 1992 | 11 | 0 |
| 1993 | 20 | 0 |
| 1994 | 16 | 0 |
| 1995 | 19 | 0 |
| 1996 | 17 | 0 |
| 1997 | 23 | 0 |
| 1998 | 55 | 0 |
| 1999 | 78 | 0 |
| 2000 | 108 | 0 |
| 2001 | 165 | 54 |
| 2002 | 137 | 134 |
| 2003 | 132 | 176 |
| 2004 | 164 | 199 |
| 2005 | 140 | 218 |
| 2006 | 139 | 186 |
| 2007 | 117 | 131 |
| 2008 | 93 | 120 |
| 2009 | 99 | 111 |
| 2010 | 97 | 73 |
| 2011 | 95 | 77 |
| 2012 | 69 | 61 |
| 2013 | 79 | 63 |
| 2014 | 65 | 73 |
| 2015 | 65 | 77 |
| 2016 | 81 | 73 |
| 2017 | 56 | 52 |
| 2018 | 56 | 83 |
| 2019 | 64 | 93 |
| 2020 | 84 | 86 |
| 2021 | 64 | 86 |
| 2022 | 62 | 63 |
| 2023 | 49 | 66 |
| 2024 | 49 | 60 |
| 2025 | 49 | 37 |
| 2026 | 26 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and methods of manufacturing the semiconductor device1 Sep 2026US 12,727,231 B2SK hynix Inc.
- Manufacturing method for semiconductor device25 Aug 2026US 12,721,064 B2Tokyo Electron Limited
- Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methods11 Aug 2026US 12,708,027 B2Wolfspeed, Inc.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium7 Jul 2026US 12,677,612 B2Kokusai Electric Corporation
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- High electron mobility transistor and method for fabricating the same17 Sep 2026US 2026/0282420 A1United Microelectronics Corp.
- Method for manufacturing substrate laminate3 Sep 2026US 2026/0262539 A1Mitsui Chemicals, Inc.
- Semiconductor devices and methods of manufacturing thereof27 Aug 2026US 2026/0255894 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming a gate stack including a dielectric layer13 Aug 2026US 2026/0239899 A1ASM IP Holding B. V.
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate767US 6,420,279 B1Sharp Laboratories of America, Inc. · 2002
- Lanthanum hafnium oxide dielectrics650US 7,235,501 B2Micron Technology, Inc. · 2007
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007