High electron mobility transistor and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorPo-Yu Yang
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Abstract
A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a channel layer on a substrate, forming a first barrier layer on the channel layer, forming a p-type semiconductor layer on the first barrier layer, forming a first patterned passivation layer on the p-type semiconductor layer, and then forming a gate electrode on the first patterned passivation layer. Preferably, the gate electrode includes a first portion adjacent to one side of the first patterned passivation layer and a second portion adjacent to another side of the first patterned passivation layer.
Claims10
A high electron mobility transistor (HEMT), comprising:
- a channel layer on a substrate;
- a barrier layer on the channel layer;
- a p-type semiconductor layer on the barrier layer;
- a first patterned passivation layer on the p-type semiconductor layer;
- a gate electrode on the first patterned passivation layer, wherein the gate electrode comprises:
- a first portion adjacent to one side of the first patterned passivation layer, wherein a sidewall of the first portion is aligned with a sidewall of the p-type semiconductor layer;
- and
- a second portion adjacent to another side of the first patterned passivation layer.
Dependencies are inferred from the claim text.