Manufacturing method for semiconductor device

Abstract

A manufacturing method for a semiconductor device including a first semiconductor element and a second semiconductor element, includes the steps of forming an insulating layer on a first substrate having a first elastic modulus higher than a second elastic modulus, forming a first semiconductor element having a first bonding surface on the insulating layer, forming a second semiconductor element having a second bonding surface on a second substrate having the second elastic modulus, bonding the first bonding surface and the second bonding surface to each other to form a laminate of the first semiconductor element and the second semiconductor element, and removing the first substrate from the laminate.

Dependencies are inferred from the claim text.