H10P 14/665
Porous materials
Official title: {Porous materials}
H10P14/665 (Porous materials) appears on 1,330 US grants and 1,345 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,330
- Published applications
- 1,345
- Assignees
- 318
- Inventors
- 2,144
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 5 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 10 | 0 |
| 1996 | 9 | 0 |
| 1997 | 7 | 0 |
| 1998 | 17 | 0 |
| 1999 | 15 | 0 |
| 2000 | 37 | 0 |
| 2001 | 57 | 21 |
| 2002 | 69 | 90 |
| 2003 | 92 | 128 |
| 2004 | 84 | 132 |
| 2005 | 80 | 139 |
| 2006 | 97 | 133 |
| 2007 | 84 | 90 |
| 2008 | 66 | 77 |
| 2009 | 64 | 70 |
| 2010 | 62 | 45 |
| 2011 | 56 | 46 |
| 2012 | 41 | 39 |
| 2013 | 56 | 41 |
| 2014 | 36 | 37 |
| 2015 | 50 | 40 |
| 2016 | 27 | 25 |
| 2017 | 23 | 22 |
| 2018 | 30 | 25 |
| 2019 | 17 | 18 |
| 2020 | 20 | 28 |
| 2021 | 25 | 27 |
| 2022 | 23 | 19 |
| 2023 | 16 | 25 |
| 2024 | 15 | 12 |
| 2025 | 11 | 7 |
| 2026 | 11 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method8 Sep 2026US 12,733,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including porous semiconductor material adjacent an isolation structure30 Jun 2026US 12,672,322 B2GLOBALFOUNDRIES U. S. Inc.
- Method for porosifying a material and semiconductor structure23 Jun 2026US 12,666,889 B2Cambridge Enterprise Limited
- Polysilazane, siliceous film-forming composition comprising the same, and method for producing siliceous film using the same16 Jun 2026US 12,655,318 B2Merck Patent GmbH
- Semiconductor device and method for fabricating the same2 Jun 2026US 12,648,169 B2Nanya Technology Corporation
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Systems and methods for controlling porous resistivities10 Sep 2026US 2026/0271688 A1IQE plc
- Substrate processing method6 Aug 2026US 2026/0231703 A1ASM IP Holding B. V.
- Integrated wet clean for gate stack development25 Jun 2026US 2026/0182290 A1APPLIED Materials.Inc.
- Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features7 May 2026US 2026/0130142 A1Versum Materials US, LLC
Most cited
By later US patents
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Post treatment of low k dielectric films670US 7,018,941 B2APPLIED Materials.Inc. · 2006
- Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound663US 6,413,583 B1APPLIED Materials.Inc. · 2002
- Process for forming a low dielectric constant carbon-containing film647US 6,632,478 B2APPLIED Materials.Inc. · 2003
- Method for manufacturing porous structure and method for forming pattern645US 6,565,763 B1Kabushiki Kaisha Toshiba · 2003