US 12,672,322 B2 · Semiconductor device including porous semiconductor material adjacent an isolation structure

Abstract

Disclosed are embodiments of a semiconductor structure including a semiconductor device with an active device region and, within the active device region, porous semiconductor material adjacent to an isolation structure. In some embodiments, the semiconductor device can be a laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET). The LDMOSFET can include an active device region, a well region within the active device region and, within the well region, an isolation structure, a porous region immediately adjacent to the isolation structure, and a drain drift region that borders the isolation structure (e.g., between a channel region and a drain region). The porous region can modify the electric field in the drain drift region around the isolation structure and, as a result, can improve both drain-to-source breakdown voltage (BVdss) and transconductance (Gm) of the device. Also disclosed are method embodiments for forming the semiconductor structure.

Claims20

Dependent claims

A structure comprising:

a semiconductor layer;
and
a device including:
a first well region in the semiconductor layer;
a porous region of the semiconductor layer within the first well region;
and
an isolation structure in the first well region,
wherein the isolation structure includes:
a trench extending into the first well region;
and isolation material within the trench,
wherein the isolation material is non-conductive, and
wherein at least one side of the trench of the isolation structure extends into the porous region such that the porous region is at least positioned laterally immediately adjacent to the isolation material of the isolation structure.

9 more elements

A method comprising:

providing a semiconductor layer;
and
forming a device including:
a first well region in the semiconductor layer;
a porous region in the semiconductor layer within the first well region;
and
an isolation structure in the first well region, wherein the isolation structure includes:
a trench extending into the first well region;
and isolation material within the trench, wherein the isolation material is non-conductive, and
wherein at least one side of the trench of the isolation structure extends into the porous region such that the porous region is at least positioned laterally immediately adjacent to the isolation material of the isolation structure.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor device including porous semiconductor material adjacent an isolation structure

Life of this patent

Semiconductor device including porous semiconductor material adjacent an isolation structure

Life of this patent

Abstract

Claims20