Method for manufacturing porous structure and method for forming pattern
AssigneeKabushiki Kaisha Toshiba
InventorsKoji Asakawa, Toshiro Hiraoka, Yoshihiro Akasaka, Yasuyuki Hotta
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Abstract
A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
Claims11
A method for forming a pattern, comprising:
- forming, on a underlyer, a pattern forming film,
- wherein said underlayer comprises at least one material selected from the group consisting of semiconductor, SiO, glass and metal;
- and
- wherein said film comprises a block copolymer or a graft copolymer comprising a polymer chain containing aromatic rings and an acrylic polymer chain;
- forming a structure having a microphase-separated polymer in the pattern forming film, wherein said microphase-separated polymer comprises at least first and second polymer microphases;
- successively removing, by a single dry-etching process, the first polymer microphase of the microphase-separated polymer and a portion of the underlayer under the removed first polymer microphase;
- wherein in said dry-etching process, the underlayer under the first polymer microphase is etched using the second polymer microphase as a mask to transfer a polymer microphase pattern to the underlayer.
Dependencies are inferred from the claim text.