H10P 14/668
The materials being characterised by the deposition precursor materials
Official title: {the materials being characterised by the deposition precursor materials}
H10P14/668 (The materials being characterised by the deposition precursor materials) appears on 5,637 US grants and 5,887 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,637
- Published applications
- 5,887
- Assignees
- 854
- Inventors
- 8,705
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 12 | 0 |
| 1978 | 4 | 0 |
| 1979 | 6 | 0 |
| 1980 | 8 | 0 |
| 1981 | 4 | 0 |
| 1982 | 7 | 0 |
| 1983 | 5 | 0 |
| 1984 | 6 | 0 |
| 1985 | 5 | 0 |
| 1986 | 15 | 0 |
| 1987 | 19 | 0 |
| 1988 | 16 | 0 |
| 1989 | 16 | 0 |
| 1990 | 17 | 0 |
| 1991 | 22 | 0 |
| 1992 | 18 | 0 |
| 1993 | 31 | 0 |
| 1994 | 36 | 0 |
| 1995 | 38 | 0 |
| 1996 | 41 | 0 |
| 1997 | 56 | 0 |
| 1998 | 73 | 0 |
| 1999 | 111 | 0 |
| 2000 | 170 | 0 |
| 2001 | 241 | 90 |
| 2002 | 248 | 231 |
| 2003 | 252 | 267 |
| 2004 | 217 | 294 |
| 2005 | 169 | 286 |
| 2006 | 212 | 321 |
| 2007 | 190 | 215 |
| 2008 | 154 | 192 |
| 2009 | 152 | 202 |
| 2010 | 164 | 164 |
| 2011 | 160 | 120 |
| 2012 | 121 | 123 |
| 2013 | 141 | 122 |
| 2014 | 96 | 157 |
| 2015 | 139 | 207 |
| 2016 | 181 | 209 |
| 2017 | 163 | 193 |
| 2018 | 185 | 278 |
| 2019 | 215 | 299 |
| 2020 | 264 | 332 |
| 2021 | 227 | 261 |
| 2022 | 216 | 318 |
| 2023 | 208 | 338 |
| 2024 | 213 | 264 |
| 2025 | 240 | 285 |
| 2026 | 130 | 119 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Treatment to control deposition rate29 Sep 2026US 12,751,223 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Alkoxydisiloxanes and dense organosilica films made therefrom29 Sep 2026US 12,751,224 B2Versum Materials US, LLC
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor isolation structures8 Oct 2026US 2026/0314046 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Poly-silicon based word line for 3d memory1 Oct 2026US 2026/0304772 A1Applied Materials, Inc. Santa Clara
- Precursors for low dielectric film deposition1 Oct 2026US 2026/0305199 A1Lam Research Corporation
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002